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单 N沟道 30 V 540 mW 3.3 nC 功率Mosfet 表面贴装 - MICRO-3

制造商零件编号: IRLML2803TRPBF
安装方法:  Surface Mount
封装形式:  MICRO-3
包装:  REEL
标准包装数量:  3,000

 
 

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价格

¥0.4923 CNY (每个)
3000 ¥0.4923
6000 - 9000 ¥0.4605 (节省6%)
12000+ ¥0.4434 (节省10%)

供货情况

现货数量 : 531,000
在途 :
756,000
最小订货量: 3,000
倍数 3,000
 

概览

产品亮点

  • Fet Type: N-Ch
  • No of Channels: 1
  • Drain-to-Source Voltage [Vdss]: 30 V
  • Drain-Source On Resistance-Max: 0.4 Ω
  • Rated Power Dissipation: 540 mW
  • Qg Gate Charge: 5 nC
  • Gate-Source Voltage-Max [Vgss]: 20 V
  • Drain Current: 1.2 A
  • Turn-on Delay Time: 3.9 ns
  • Turn-off Delay Time: 9 ns
  • Rise Time: 4 ns
  • Fall Time: 1.7 ns
  • Operating Temp Range: -55 to +150 °C
  • Gate Source Threshold: 1 V
  • Technology: Si
  • Height - Max: 1.02 mm
  • Length: 3.04 mm
  • Input Capacitance: 85 pF

此产品不能运往到欧洲。

The IRLML2803TRPBF is a 30 V drain-to-source voltage, 540 W power dissipation and 3.3 nC gate charge single N-Channel hexfet power mosfet. It is available in surface mount MICRO-3 package.

These HEXFETs utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features:

  • Generation V technology
  • Ultra Low On-Resistance
  • N-Channel MOSFET
  • SOT-23 Footprint
  • Low Profile(<1.1 mm)
  • Available in tape and reel
  • Fast switching
  • Lead-Free

View the available IRLML series of N-Channel hexfet power mosfet

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欲了解更多信息,中国大陆:请拨打400 821 6206,中国大陆以
外地区:请拨打800-5559-9555。

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